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Influence of the gate bias stress on the stability of n-type Organic Field-Effect Transistors based on Dicyanovinylenes-Dihydroindenofluorene semiconductors

Abstract

The electrical stabilities of n-type Organic Field-Effect transistors (OFETs) based on dihydroindeno[1,2-b]fluorene and dihydroindeno[2,1-b]fluorene derivatives have been studied. These OFETs incorporate epoxy based photoresist SU-8 as gate insulator. The comparison of the electrical stability through gate bias stress measurements as a function of voltage and temperature stress shows that the instabilities of these OFETs result from different phenomena. Different models have been used to analyse the device’s instabilities and are discussed. As the two molecules only differs by their geometry and by their substitution, this works shows how slight structural modifications of the semiconductor molecular structure induce electrical instabilities of the corresponding OFETs arising from different features.

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Publication details

The article was received on 26 Apr 2018, accepted on 07 Jun 2018 and first published on 13 Jun 2018


Article type: Research Article
DOI: 10.1039/C8QM00193F
Citation: Mater. Chem. Front., 2018, Accepted Manuscript
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    Influence of the gate bias stress on the stability of n-type Organic Field-Effect Transistors based on Dicyanovinylenes-Dihydroindenofluorene semiconductors

    S. Bebiche, P. Cisneros-Perez, T. Mohammed-Brahim, M. Harnois, J. Rault - Berthelot, C. Poriel and E. Jacques, Mater. Chem. Front., 2018, Accepted Manuscript , DOI: 10.1039/C8QM00193F

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