Jump to main content
Jump to site search


Influence of the gate bias stress on the stability of n-type organic field-effect transistors based on dicyanovinylene–dihydroindenofluorene semiconductors

Author affiliations

Abstract

The electrical stabilities of n-type Organic Field-Effect Transistors (OFETs) based on dihydroindeno[1,2-b]fluorene and dihydroindeno[2,1-b]fluorene derivatives have been studied. These OFETs incorporate epoxy-based photoresist SU-8 as the gate insulator. The comparison of the electrical stability through gate bias stress measurements as a function of voltage and temperature stress shows that the instabilities of these OFETs result from different phenomena. Different models have been used to analyse the instabilities of the devices and these are discussed. As the two molecules only differ by their geometry and their substitution, this study shows how slight structural modifications of the semiconductor molecular structure induce electrical instabilities in the corresponding OFETs arising from different features.

Graphical abstract: Influence of the gate bias stress on the stability of n-type organic field-effect transistors based on dicyanovinylene–dihydroindenofluorene semiconductors

Back to tab navigation

Supplementary files

Publication details

The article was received on 26 Apr 2018, accepted on 07 Jun 2018 and first published on 13 Jun 2018


Article type: Research Article
DOI: 10.1039/C8QM00193F
Citation: Mater. Chem. Front., 2018, Advance Article
  •   Request permissions

    Influence of the gate bias stress on the stability of n-type organic field-effect transistors based on dicyanovinylene–dihydroindenofluorene semiconductors

    S. Bebiche, P. A. Cisneros-Perez, T. Mohammed-Brahim, M. Harnois, J. Rault-Berthelot, C. Poriel and E. Jacques, Mater. Chem. Front., 2018, Advance Article , DOI: 10.1039/C8QM00193F

Search articles by author

Spotlight

Advertisements