Jump to main content
Jump to site search

Issue 2, 2018
Previous Article Next Article

PbI2 band gap engineering by gel incorporation

Author affiliations

Abstract

Incorporation of guest materials into semiconducting single crystalline hosts leads to the formation of semiconducting single-crystal composites. However, limited efforts have been made to comprehensively investigate the property of these potential functionalized single-crystal composites. Herein, PbI2/gel single-crystal composites have been successfully prepared. Diffuse reflectance spectra show a clear increase in the band gap of PbI2 after gel incorporation. The band gap is further increased through expanding the area of host/guest interfaces or enhancing the interatomic forces at the interfaces. The interatomic forces (electrostatic interaction) at the host/guest interfaces are attributed to this band gap shift. As such, this study provides a novel and facile way for band gap engineering by gel incorporation.

Graphical abstract: PbI2 band gap engineering by gel incorporation

Back to tab navigation

Supplementary files

Publication details

The article was received on 05 Nov 2017, accepted on 14 Dec 2017 and first published on 15 Dec 2017


Article type: Research Article
DOI: 10.1039/C7QM00509A
Citation: Mater. Chem. Front., 2018,2, 362-368
  •   Request permissions

    PbI2 band gap engineering by gel incorporation

    C. Hu, T. Ye, Y. Liu, J. Ren, X. Jin, H. Chen and H. Li, Mater. Chem. Front., 2018, 2, 362
    DOI: 10.1039/C7QM00509A

Search articles by author

Spotlight

Advertisements