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Gas adsorbates are Coulomb scatterers, rather than neutral ones, in monolayer MoS2 field effect transistor

Abstract

Direct current (DC) and low-frequency (LF) noise analyses of chemical vapor deposition (CVD)-grown monolayer MoS2 field effect transistor (FET) indicate that time-varying carrier perturbations originate from gas adsorbates. The LF noise analysis supports that the natural desorption of physisorbed gas molecules, water and oxygen, largely reduces the interface trap density (NST) under vacuum conditions (~10–8 Torr) for 2 weeks. After a longer period of 8 months in vacuum, the carrier scattering mechanism alters, in particular for the low carrier density (Nacc) region. The decreases of both NST and the scattering parameter αSC with desorption of surficial adsorbates from MoS2, explain the enhanced carrier mobility and the early turn-on of the device. The stabilized carrier behavior is verified with γ = 0.5 in the formula αSC ∝ Nacc, as in Si-MOSFETs. Our results support that the gas adsorbates are working as charged impurities, rather than the neutral ones.

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Publication details

The article was received on 02 May 2018, accepted on 16 May 2018 and first published on 17 May 2018


Article type: Communication
DOI: 10.1039/C8NR03570A
Citation: Nanoscale, 2018, Accepted Manuscript
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    Gas adsorbates are Coulomb scatterers, rather than neutral ones, in monolayer MoS2 field effect transistor

    H. Ji, Y. Hojoon, J. seok, H. Kim, Y. H. Lee and S. C. lim, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR03570A

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