Jump to main content
Jump to site search

Issue 26, 2018
Previous Article Next Article

Direct synthesis of graphene on silicon oxide by low temperature plasma enhanced chemical vapor deposition

Author affiliations

Abstract

Direct graphene growth on silicon with a native oxide using plasma enhanced chemical vapour deposition at low temperatures [550 °C–650 °C] is demonstrated for the first time. It is shown that the fine-tuning of a two-step synthesis with gas mixtures C2H2/H2 yields monolayer and few layer graphene films with a controllable domain size from 50 nm to more than 300 nm and the sheet resistance ranging from 8 kΩ sq−1 to less than 1.8 kΩ sq−1. Differences are understood in terms of the interaction of the plasma species – chiefly atomic H – with the deposited graphene and the native oxide layer. The proposed low temperature direct synthesis on an insulating substrate does not require any transfer processes and improves the compatibility with the current industrial processes.

Graphical abstract: Direct synthesis of graphene on silicon oxide by low temperature plasma enhanced chemical vapor deposition

Back to tab navigation

Supplementary files

Publication details

The article was received on 19 Apr 2018, accepted on 01 Jun 2018 and first published on 01 Jun 2018


Article type: Paper
DOI: 10.1039/C8NR03210F
Citation: Nanoscale, 2018,10, 12779-12787
  •   Request permissions

    Direct synthesis of graphene on silicon oxide by low temperature plasma enhanced chemical vapor deposition

    R. Muñoz, L. Martínez, E. López-Elvira, C. Munuera, Y. Huttel and M. García-Hernández, Nanoscale, 2018, 10, 12779
    DOI: 10.1039/C8NR03210F

Search articles by author

Spotlight

Advertisements