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Novel Antimonene Tunneling Field-Effect Transistors Using Abrupt Transition of Semiconductor to Metal in Monolayer and Multilayer Antimonene Heterostructure

Abstract

Recently, mono-elemental two-dimensional (2-D) material, namely antimonene with a large band gap, decent mobility and ambient stability has been extensively researched. Interestingly, although antimonene is semiconductor with a sizable band gap in monolayer, it is transformed to metal in multilayer. Inspired by this thickness dependent semiconductor to metal transition, we propose novel antimonene tunneling field-effect transistors (TFETs) based on the lateral monolayer (semiconducting) / multilayer (metallic) / monolayer (semiconducting) heterostructure. Our antimonene TFETs consists of semiconducting monolayer source, channel and drain and the small metallic multilayer region between source and channel. The local multilayer region introduces gapless metallic states which dramatically enhance the tunneling probability and hence results in a large current. To investigate the effect of metallic multilayer on device performances, we carry out ab-initio electronic structure and quantum transport calculations for several antimonene TFETs based on the different monolayer / multilayer / monolayer heterostructures. Simulation shows that even ~ 1nm scale nanostructured multilayer significantly boosts up the current and enables the abrupt device switching. More extensive evaluation is performed through benchmarking with phosphorene TFETs which has been identified as the best 2-D material based TFETs so far. In terms of the main figures of merit for FETs such as the intrinsic delay time and the power delay product, antimonene heterostructure TFETs outperforms phosphorene TFETs, primarily due to the elimination of tunneling barrier by the locally constructed multilayer antimonene.

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Publication details

The article was received on 19 Apr 2018, accepted on 12 Jun 2018 and first published on 13 Jun 2018


Article type: Paper
DOI: 10.1039/C8NR03191F
Citation: Nanoscale, 2018, Accepted Manuscript
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    Novel Antimonene Tunneling Field-Effect Transistors Using Abrupt Transition of Semiconductor to Metal in Monolayer and Multilayer Antimonene Heterostructure

    J. Chang, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR03191F

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