Jump to main content
Jump to site search


Enhancement of photoluminescence and hole mobility in 1- to 5-layer InSe due to the top valence-band inversion: strain effect

Abstract

Recently, two-dimensional (2D) few-layer InSe nanosheet becomes one of the most interesting materials due to its excellent electron transport, wide bandgap tunability and good metal contact. However, the low photoluminescence (PL) efficiency and hole mobility seriously restrict its application in 2D InSe-based nano-devices. Here, by exerting a suitable compressive strain, a remarkable modification for the electronic structure, optical and transport properties of 1- to 5-layer InSe has been confirmed by the powerful GW-BSE calculations. Both top valence band inversion and indirect-to-direct bandgap transition are induced; the light polarization is reversed from E∥c to E⊥c; and the PL intensity and hole mobility are enhanced greatly. Surprisingly, under 6% compressive strain, the light emission of monolayer InSe with E⊥c is allowed at 2.58 eV, which has never been observed previously. Meanwhile, for the 2D few-layer InSe, the PL with E⊥c polarization increases over 10 times in intensity and has a blue-shift about 0.6-0.7 eV, and the hole mobility increases two orders of magnitude up to 103 cm2V-1s-1, as high as electrons. The strained few-layer InSe are thus a promising candidate for future 2D electronic and optoelectronic nano-devices.

Back to tab navigation

Supplementary files

Publication details

The article was received on 18 Apr 2018, accepted on 11 May 2018 and first published on 16 May 2018


Article type: Paper
DOI: 10.1039/C8NR03172J
Citation: Nanoscale, 2018, Accepted Manuscript
  •   Request permissions

    Enhancement of photoluminescence and hole mobility in 1- to 5-layer InSe due to the top valence-band inversion: strain effect

    M. Wu, J. Shi, M. Zhang, Y. Ding, H. Wang, Y. Cen and J. Lu, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR03172J

Search articles by author

Spotlight

Advertisements