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Effect of Boron Doping on Electrical Conductivity of Metallicity–Separated Single Walled Carbon Nanotube

Abstract

We explored the effect of substitutional boron doping on the electrical conductivity of metallicity-separated single walled carbon nanotubes (SWCNT) assembly. Boron atoms were introduced into semiconducting (S)- and metallic (M)- SWCNT assemblies using high temperature thermal diffusion and the concentration of the doped boron atoms was controlled by the thermal treatment temperature. Depending on the conduction mechanism of SWCNTs assembly, both positive and negative effect upon boron incorporation is observed. For the S-SWCNT sheet, the electrical resistivity decreased by about 1 order on introduction of a small amount of boron atoms, due to localized state for hopping conduction. By contrast, we observed an increase in the electrical resistivity on boron doping for M-SWCNTs. The pristine and boron doped metallic SWCNTs exhibited a tendency of decreasing electrical resistivity in presence of an external magnetic field perpendicular to the film, which indicated two-dimensional weak localization behavior. A detailed analysis of the resistivity and the magnetoresistance implied that an increase in inelastic scattering event at the doped boron site reduced phase coherence length, leading to an increase in electrical resistivity.

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Publication details

The article was received on 21 Mar 2018, accepted on 05 Jun 2018 and first published on 06 Jun 2018


Article type: Paper
DOI: 10.1039/C8NR02323A
Citation: Nanoscale, 2018, Accepted Manuscript
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    Effect of Boron Doping on Electrical Conductivity of Metallicity–Separated Single Walled Carbon Nanotube

    K. Fujisawa, T. Hayashi, M. Endo, M. Terrones, J. H. Kim and Y. A. Kim, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR02323A

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