Jump to main content
Jump to site search


Photocurrent modulation under dual excitation in individual GaN nanowires

Abstract

Photo-response properties of vapor-liquid-solid (VLS) grown [10-10] oriented individual GaN nanowires of diameter ranging from 30 to 100 nm are investigated under joint illumination of above and sub-bandgap lights. When illuminated with above band gap light, these wires show persistent photoconductivity (PPC) effect with long build-up and decay times. The study reveals a quenching of photoconductivity (PC) upon illumination with an additional sub-bandgap light. PC recovers when the sub-bandgap illumination is withdrawn. A rate equation model attributing PPC effect to the entrapment of photo-generated holes at the surface states and the PC quenching effect to the sub-bandgap light driven release of the holes from the trapped states has been proposed. The average height of the capture barrier has been found to be about 400 meV. The study also suggests that the capture barrier has a broad distribution with an upper cut-off energy of ~ 2 eV.

Back to tab navigation

Publication details

The article was received on 20 Mar 2018, accepted on 22 May 2018 and first published on 23 May 2018


Article type: Paper
DOI: 10.1039/C8NR02298D
Citation: Nanoscale, 2018, Accepted Manuscript
  •   Request permissions

    Photocurrent modulation under dual excitation in individual GaN nanowires

    S. Yadav, S. Deb, K. D. Gupta and S. Dhar, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR02298D

Search articles by author

Spotlight

Advertisements