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Atomic-Scale Understanding of High Thermal Stability of Mo/CoFeB/MgO Spin Injector for Spin-Injection in Remanence

Abstract

Remanent spin injection in spin light emitting diode (spin-LED) at zero magnetic field is a prerequisite for future application of spin optoelectronics. Here, we demonstrate the remanent spin injection into GaAs based LED with thermally stable Mo/CoFeB/MgO spin injector. A systematic study of magnetic properties, polarization-resolved electroluminescence (EL) and atomic-scale interfacial structures has been performed in comparison with the Ta/CoFeB/MgO spin injector. The perpendicular magnetic anisotropy (PMA) of Mo/CoFeB/MgO injector shows much advanced thermal stability than that of Ta/CoFeB/MgO injector and robust PMA can be maintained up to 400°C annealing. The remanent circular polarization (PC) of EL from the Mo capped spin-LED reaches a maximum value of 10% after 300°C annealing, and even persists in 4% after 400°C annealing. On the contrary, the Ta capped spin-LED almost completely loses the remanent PC under 400°C annealing. The combined advanced electron microscopy and spectroscopy studies reveals that a large amount of Ta diffuses into the MgO tunneling barrier through CoFeB layer after 400°C annealing. However, the diffusion of Mo into CoFeB is limited and never reaches the MgO barrier. These findings afford a comprehensive perspective to use the high thermally stable Mo/CoFeB/MgO spin injector for an efficient electrical spin injection in remanence.

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Publication details

The article was received on 19 Mar 2018, accepted on 24 Apr 2018 and first published on 24 Apr 2018


Article type: Paper
DOI: 10.1039/C8NR02250J
Citation: Nanoscale, 2018, Accepted Manuscript
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    Atomic-Scale Understanding of High Thermal Stability of Mo/CoFeB/MgO Spin Injector for Spin-Injection in Remanence

    B. Tao, P. Barate, X. Devaux, P. Renucci, J. Frougier, A. Djeffal, S. Liang, B. Xu, M. Hehn, H. Jaffres, J. George, X. Marie, S. Mangin, X. Han, Z. Wang and Y. LU, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR02250J

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