Issue 21, 2018

Proximity-induced magnetism and an anomalous Hall effect in Bi2Se3/LaCoO3: a topological insulator/ferromagnetic insulator thin film heterostructure

Abstract

Inducing magnetism in a topological insulator (TI) by exchange coupling with a ferromagnetic insulator (FMI) will break the time-reversal symmetry of topological surface states, offering possibilities to realize several predicted novel magneto-electric effects. Seeking suitable FMI materials is crucial for the coupling of heterojunctions, and yet is challenging as well and only a few kinds have been explored. In this report, we introduce epitaxial LaCoO3 thin films on a SrTiO3 substrate, which is an insulating ferromagnet with a Curie temperature of TC ∼ 85 K, to be combined with TIs for proximity coupling. Thin films of the prototype topological insulator, Bi2Se3, are successfully grown onto the (001) surface of LaCoO3/SrTiO3, forming a high-quality TI/FMI heterostructure with a sharp interface. The magnetic and transport measurements manifest the emergence of a ferromagnetic phase in Bi2Se3 films, with additional induced moments and a suppressed weak antilocalization effect, while preserving the carrier mobility of the intrinsic Bi2Se3 films at the same time. Moreover, a signal of an anomalous Hall effect is observed and persists up to temperatures above 100 K, paving the way towards spintronic device applications.

Graphical abstract: Proximity-induced magnetism and an anomalous Hall effect in Bi2Se3/LaCoO3: a topological insulator/ferromagnetic insulator thin film heterostructure

Supplementary files

Article information

Article type
Paper
Submitted
13 Mar 2018
Accepted
23 Apr 2018
First published
24 Apr 2018

Nanoscale, 2018,10, 10041-10049

Proximity-induced magnetism and an anomalous Hall effect in Bi2Se3/LaCoO3: a topological insulator/ferromagnetic insulator thin film heterostructure

S. Zhu, D. Meng, G. Liang, G. Shi, P. Zhao, P. Cheng, Y. Li, X. Zhai, Y. Lu, L. Chen and K. Wu, Nanoscale, 2018, 10, 10041 DOI: 10.1039/C8NR02083C

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