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Lead-free, air-stable hybrid organic-Inorganic perovskite resistive switching memory with ultrafast switching and multilevel data storage

Abstract

Organolead halide perovskites exhibit excellent optoelectronic and photovoltaic properties such as wide range of light absorption and tunable band gap. However, the presence of toxic element and chemical instability in ambient atmosphere hindered lead halide perovskites from real device applications because of environmental issue and stability. Here, we demonstrate resistive switching memory device based on a lead-free bismuth halide perovskite (CH3NH3)3Bi2I9 (MABI). The active layer of the device can be easily prepared by solvent engineering. The nonvolatile memory based on MABI layers has reliable retention properties (~104 s), endurance (300 cycles), and switching speed (100 ns), as well as environmental stability. Moreover, control of the compliance current leads to multilevel data stroage with four resistance states, which can be applied to high-density memory devices. These results suggest that MABI has potential applications in information-storage.

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Publication details

The article was received on 30 Jan 2018, accepted on 26 Mar 2018 and first published on 27 Mar 2018


Article type: Paper
DOI: 10.1039/C8NR00863A
Citation: Nanoscale, 2018, Accepted Manuscript
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    Lead-free, air-stable hybrid organic-Inorganic perovskite resistive switching memory with ultrafast switching and multilevel data storage

    B. Hwang and J. Lee, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR00863A

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