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Issue 17, 2018
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Enhanced performance of a graphene/GaAs self-driven near-infrared photodetector with upconversion nanoparticles

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Abstract

Near-infrared photodetectors (NIRPDs) have attracted great attention because of their wide range of applications in many fields. Herein, a novel self-driven NIRPD at the wavelength of 980 nm is reported based on the graphene/GaAs heterostructure. Extraordinarily, its sensitivity to light illumination (980 nm) is far beyond the absorption limitation of GaAs (874 nm). This means that the photocurrent originates from the separation of photo-induced carriers in graphene, which is caused by the vertically built-in electric field formed through the high quality van der Waals contact between graphene and GaAs. Moreover, after introducing NaYF4:Yb3+/Er3+ upconversion nanoparticles (UCNPs) onto the graphene/GaAs heterojunction, the responsivity increases to be as superior as 5.97 mA W−1 and the corresponding detectivity is 1.1 × 1011 cm Hz0.5 W−1 under self-driven conditions. This dramatic improvement is mainly ascribed to the radiative energy transfer from UCNPs to the graphene/GaAs heterostructure. The high-quality and self-driven UCNPs/graphene/GaAs heterostructure NIRPD holds significant potential for practical application in low-consumption and large-scale optoelectronic devices.

Graphical abstract: Enhanced performance of a graphene/GaAs self-driven near-infrared photodetector with upconversion nanoparticles

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Publication details

The article was received on 22 Jan 2018, accepted on 18 Mar 2018 and first published on 22 Mar 2018


Article type: Paper
DOI: 10.1039/C8NR00594J
Citation: Nanoscale, 2018,10, 8023-8030
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    Enhanced performance of a graphene/GaAs self-driven near-infrared photodetector with upconversion nanoparticles

    J. Wu, Z. Yang, C. Qiu, Y. Zhang, Z. Wu, J. Yang, Y. Lu, J. Li, D. Yang, R. Hao, E. Li, G. Yu and S. Lin, Nanoscale, 2018, 10, 8023
    DOI: 10.1039/C8NR00594J

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