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In situ TEM observation of rebonding on fractured silicon carbide


Silicon carbide (SiC) is widely used in harsh environments and extreme conditions, such as high-power, high-temperature, high-current, high-voltage and high-frequency. Rebonding and self-matching of stack faults (SFs) is highly desirable to avoid catastrophic failure for SiC devices, especially for specific applications in aerospace and nuclear power industry. In this study, a novel approach is developed using an eyebrow to pick up and transfer nanowires (NWs), in order to obtain in situ transmission electron microscope (TEM) images of rebonding and self-matching of SFs at atomic resolution. During rebonding and healing, the electron beam is shut off. Rebonding on fractured surfaces of monocrystalline and amorphous SiC NWs is observed by in situ TEM at room temperature. The fracture strength is 1.7 GPa after crack-healing, restoring 12.9% that of a single crystal NW. Partial recrystallization along <111> orientation and self-matching of SFs are responsible for the rebonding of the monocrystalline NW. In comparison, the fracture strength is 6.7 and 5.5 GPa for the first and second rebonding, respectively recovering 67% and 55% that of an amorphous NW. Atomic diffusion contributes enormously to the rebonding on fractured surfaces of an amorphous NW, resulting in the healed surface consisting of amorphous phase and crystallites. Rebonding function provides new insights on the fabrication of high-performance SiC devices for the aerospace, optoelectronic and semiconductor industries.

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Publication details

The article was received on 13 Jan 2018, accepted on 13 Feb 2018 and first published on 13 Feb 2018

Article type: Communication
DOI: 10.1039/C8NR00341F
Citation: Nanoscale, 2018, Accepted Manuscript
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    In situ TEM observation of rebonding on fractured silicon carbide

    Z. Zhang, J. Cui, B. Wang, H. Jiang, G. Chen, J. Yu, C. Lin, C. Tang, A. Hartmaier, J. Zhang, J. Luo, A. Rosenkranz, N. Jiang and D. Guo, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR00341F

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