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A graphene/single GaAs nanowire Schottky junction photovoltaic device

Abstract

Graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA/W and short response/recover time of 85/118 μs at zero bias. Under AM 1.5G solar illumination, the device has an open-circuit voltage of 75 mV and a short-circuit current density of 425 mA/cm2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.

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Publication details

The article was received on 08 Jan 2018, accepted on 15 Apr 2018 and first published on 16 Apr 2018


Article type: Paper
DOI: 10.1039/C8NR00158H
Citation: Nanoscale, 2018, Accepted Manuscript
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    A graphene/single GaAs nanowire Schottky junction photovoltaic device

    Y. Luo, X. Yan, J. Zhang, B. Li, Y. Wu, Q. Lu, C. Jin, X. Zhang and X. Ren, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR00158H

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