Jump to main content
Jump to site search

A graphene/single GaAs nanowire Schottky junction photovoltaic device


Graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA/W and short response/recover time of 85/118 μs at zero bias. Under AM 1.5G solar illumination, the device has an open-circuit voltage of 75 mV and a short-circuit current density of 425 mA/cm2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.

Back to tab navigation

Publication details

The article was received on 08 Jan 2018, accepted on 15 Apr 2018 and first published on 16 Apr 2018

Article type: Paper
DOI: 10.1039/C8NR00158H
Citation: Nanoscale, 2018, Accepted Manuscript
  •   Request permissions

    A graphene/single GaAs nanowire Schottky junction photovoltaic device

    Y. Luo, X. Yan, J. Zhang, B. Li, Y. Wu, Q. Lu, C. Jin, X. Zhang and X. Ren, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR00158H

Search articles by author