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Wavelength-tunable mid-infrared thermal emitters with a non-volatile phase changing material

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Abstract

The ability to continuously tune the emission wavelength of mid-infrared thermal emitters while maintaining high peak emissivity remains a challenge. By incorporating the nonvolatile phase changing material Ge2Sb2Te5 (GST), two different kinds of wavelength-tunable mid-infrared thermal emitters based on simple layered structures (GST-Al bilayer and Cr-GST-Au trilayer) are demonstrated. Aiming at high peak emissivity at a tunable wavelength, an Al film and an ultrathin (∼5 nm) top Cr film are adopted for these two structures, respectively. The gradual phase transition of GST provides a tunable peak wavelength between 7 μm and 13 μm while high peak emissivity (>0.75 and >0.63 for the GST-Al and Cr-GST-Au emitters, respectively) is maintained. This study shows the capability of controlling the thermal emission wavelength, the application of which may be extended to gas sensors, infrared imaging, solar thermophotovoltaics, and radiative coolers.

Graphical abstract: Wavelength-tunable mid-infrared thermal emitters with a non-volatile phase changing material

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Publication details

The article was received on 28 Dec 2017, accepted on 28 Jan 2018 and first published on 29 Jan 2018


Article type: Paper
DOI: 10.1039/C7NR09672K
Citation: Nanoscale, 2018, Advance Article
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    Wavelength-tunable mid-infrared thermal emitters with a non-volatile phase changing material

    K. Du, L. Cai, H. Luo, Y. Lu, J. Tian, Y. Qu, P. Ghosh, Y. Lyu, Z. Cheng, M. Qiu and Q. Li, Nanoscale, 2018, Advance Article , DOI: 10.1039/C7NR09672K

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