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Issue 10, 2018
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Balancing silicon/aluminum oxide junctions for super-plasmonic emission enhancement of quantum dots via plasmonic metafilms

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Abstract

We study the impact of structural features of Si/Al oxide junctions on metal–oxide plasmonic metafilms formed via placing such junctions in close vicinity of an Au/Si Schottky barrier. The emission intensity and dynamics of colloidal semiconductor quantum dots deposited on such metafilms are investigated, while the surface morphology and structural compositions of the Si/Al oxide junction are controlled. The results show the conditions wherein the Si/Al oxide junction can reshape the impact of plasmonic effects, allowing it to increase the lifetimes of excitons. Under these conditions, the plasmonic metafilms can quarantine excitons against the fluctuating trap environments of the quantum dots, offering super-plasmonic emission enhancement that includes enhancement of the spontaneous emission decay rate combined with the suppression of Auger decay.

Graphical abstract: Balancing silicon/aluminum oxide junctions for super-plasmonic emission enhancement of quantum dots via plasmonic metafilms

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Publication details

The article was received on 17 Dec 2017, accepted on 01 Feb 2018 and first published on 01 Feb 2018


Article type: Paper
DOI: 10.1039/C7NR09396A
Citation: Nanoscale, 2018,10, 4825-4832
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    Balancing silicon/aluminum oxide junctions for super-plasmonic emission enhancement of quantum dots via plasmonic metafilms

    S. M. Sadeghi, W. J. Wing, R. R. Gutha, J. S. Wilt and J. Z. Wu, Nanoscale, 2018, 10, 4825
    DOI: 10.1039/C7NR09396A

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