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Improved Quantum Efficiency Models of CZTSe: nanolayer Ge solar cells with linear electric field

Abstract

We fabricated and characterized CZTSe:nanolayer Ge (<10 nm) thin film solar cells to quantitatively demonstrate an exact analytical model of quantum efficiency for Ge doped CZTSe devices. The linear electric field model is developed with incomplete gamma function of the quantum efficiency as compared to empirical data at forward bias condition. This model is characterized with a consistent set of parameters from a series of measurements and literature. Using analytical modeling method, the carrier collection profile in the absorber is calculated and closely fitted by developed mathematical expressions to identify the carrier dynamics during the quantum efficiency measurement of the device. The analytical calculation is compared with measured quantum efficiency data under various bias conditions.

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Publication details

The article was received on 26 Nov 2017, accepted on 02 Jan 2018 and first published on 03 Jan 2018


Article type: Paper
DOI: 10.1039/C7NR08824H
Citation: Nanoscale, 2018, Accepted Manuscript
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    Improved Quantum Efficiency Models of CZTSe: nanolayer Ge solar cells with linear electric field

    S. Lee, K. J. Price, E. Saucedo and S. Giraldo, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C7NR08824H

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