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Efficient and Ultraviolet Durable Planar Perovskite Solar Cells via Ferrocenecarboxylic Acid Modified Nickel Oxide Hole Transport Layer

Abstract

Planar perovskite solar cells (PSCs) used nickel oxide (NiOx) as hole transport layer have recently attracted tremendous attention because of their excellent photovoltaic efficiencies and simple fabrication. However, the electrical conductivity of NiOx and the interface contact properties of NiOx/perovskite layer are always limited for NiOx layer fabricated with relatively low annealing temperature. Ferrocenedicarboxylic acid (FDA) was firstly introduced to modify p-type NiOx hole transport layer in PSCs, which obviously improve crystallization of perovskite layer and hole transport and collection abilities and reduce carrier recombination. PSCs with FDA modified NiOx layer reached 18.20% of PCE, which is greatly higher than PCE (15.13%) of reference PSCs. Furthermore, PSCs with FDA interfacial modification layer show better UV durativity and hysteresis- free effect and still remain 49.8% of the original PCE value after exposing UV for 24 h. The enhanced performance of PSCs is attributed to better crystallization of perovskite layer, passivation effect of FDA, superior interface contact at NiOx/perovskite layers and enhancing electrical conductivity of FDA modified NiOx layer. In addition, PSCs with FDA inserted at the interface of perovskite/PCBM layers can also improve PCE and reach 16.62% of PCE, indicating that FDA have dual functions to modify p-type and n-type carrier transporting layer.

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Publication details

The article was received on 23 Nov 2017, accepted on 13 Feb 2018 and first published on 15 Feb 2018


Article type: Paper
DOI: 10.1039/C7NR08750K
Citation: Nanoscale, 2018, Accepted Manuscript
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    Efficient and Ultraviolet Durable Planar Perovskite Solar Cells via Ferrocenecarboxylic Acid Modified Nickel Oxide Hole Transport Layer

    J. Zhang, H. Luo, W. Xie, X. Lin, X. Hou, J. Zhou, S. Huang, W. Ou-Yang, Z. Sun and X. Chen, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C7NR08750K

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