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Issue 11, 2018
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Controlled doping of transition metal dichalcogenides by metal work function tuning in phthalocyanine compounds

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Abstract

We explored surface charge transfer interaction between a family of phthalocyanine (Pc) compounds and transition metal dichalcogenides (TMDs). Comparing the device characteristics of TMD field-effect transistors (FETs), we demonstrate both p-type and n-type doping of TMDs by tuning the work function of the metal substitution in the Pc compound. Our findings suggest a near linear correlation between the metal work function and doping level. Such doping predictability has yet to be achieved whereas we provide here the first report of its kind.

Graphical abstract: Controlled doping of transition metal dichalcogenides by metal work function tuning in phthalocyanine compounds

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Publication details

The article was received on 14 Nov 2017, accepted on 06 Feb 2018 and first published on 01 Mar 2018


Article type: Paper
DOI: 10.1039/C7NR08497H
Citation: Nanoscale, 2018,10, 5148-5153
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    Controlled doping of transition metal dichalcogenides by metal work function tuning in phthalocyanine compounds

    C. J. Benjamin, S. Zhang and Z. Chen, Nanoscale, 2018, 10, 5148
    DOI: 10.1039/C7NR08497H

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