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All Two-Dimensional Materials Three-Terminal Graphene Nanoelectromechanical Switch

Abstract

An alternative three terminal (3T) subthermal subthreshold slope (SS) switch is required to overcome the exponential increase in leakage current with the increase in the drive current of CMOS devices. This report details a 3T graphene nanoelectromechanical (3T-GNEM) switch with the physically isolated channel in an off-state generated from heterogeneously stacked two-dimensional (2D) materials. Hexagonal boron nitride (h-BN) was used for the dielectric layer, graphene for the top double clamped beam drain and gate and source electrode materials, which are stacked vertically to achieve a small footprint. The drain to source contact is normally-open with the air gap in an off-state, the gate voltage is applied to mechanically deflect the drain terminal of the doubly clamped graphene beam to make electric contact with the source terminal for the on-state. This 3T-GNEM switch exhibits SS as small as 10.4 mV dec-1 at room temperature, pull-in voltage less than 6 V and a switching voltage window of under 2 V. As source and drain terminals are not connected physically in the off-state, this 3T-GNEM switch is a promising candidate for future high performance low-power logic circuits and all-2D flexible electronics.

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Publication details

The article was received on 13 Nov 2017, accepted on 08 Apr 2018 and first published on 09 Apr 2018


Article type: Paper
DOI: 10.1039/C7NR08439K
Citation: Nanoscale, 2018, Accepted Manuscript
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    All Two-Dimensional Materials Three-Terminal Graphene Nanoelectromechanical Switch

    N. Huynh Van, M. Muruganathan, J. Kulothungan and H. Mizuta, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C7NR08439K

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