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Issue 10, 2018
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Three-dimensional GaN dodecagonal ring structures for highly efficient phosphor-free warm white light-emitting diodes

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Abstract

Warm and natural white light (i.e., with a correlated colour temperature <5000 K) with good colour rendition (i.e., a colour rendering index >75) is in demand as an indoor lighting source of comfortable interior lighting and mood lighting. However, for warm white light, phosphor-converted white light-emitting diodes (WLEDs) require a red phosphor instead of a commercial yellow phosphor (YAG:Ce3+), and suffer from limitations such as unavoidable energy conversion losses, degraded phosphors and high manufacturing costs. Phosphor-free WLEDs based on three-dimensional (3D) indium gallium nitride (InGaN)/gallium nitride (GaN) structures are promising alternatives. Here, we propose a new concept for highly efficient phosphor-free warm WLEDs using 3D core–shell InGaN/GaN dodecagonal ring structures, fabricated by selective area growth and the KOH wet etching method. Electrically driven, phosphor-free warm WLEDs were successfully demonstrated with a low correlated colour temperature (4500 K) and high colour rendering index (Ra = 81). From our findings, we believe that WLEDs based on dodecagonal ring structures become a platform enabling a high-efficiency warm white light-emitting source without the use of phosphors.

Graphical abstract: Three-dimensional GaN dodecagonal ring structures for highly efficient phosphor-free warm white light-emitting diodes

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Publication details

The article was received on 30 Oct 2017, accepted on 09 Jan 2018 and first published on 09 Jan 2018


Article type: Paper
DOI: 10.1039/C7NR08079D
Citation: Nanoscale, 2018,10, 4686-4695
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    Three-dimensional GaN dodecagonal ring structures for highly efficient phosphor-free warm white light-emitting diodes

    Y. C. Sim, S. Lim, Y. Yoo, M. Jang, S. Choi, H. Yeo, K. Y. Woo, S. Lee, H. G. Song and Y. Cho, Nanoscale, 2018, 10, 4686
    DOI: 10.1039/C7NR08079D

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