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Optical Emission of GaN/AlN Quantum-Wires - The Role of Charge Transfer from the Nanowire Template


We show that one-dimensional (1d) GaN quantum wires (QWRs) exhibit intense and spectrally sharp emission lines. These QWRs are realized in an entirely self-assembled growth process by molecular beam epitaxy (MBE) on the side facets of GaN/AlN nanowire (NW) heterostructures. Time-integrated and time-resolved photoluminescence (PL) data in combination with numerical calculations allow the identification and assignment of the manifold emission features to three different spatial recombination centers within the NW. The recombination processes in the QWRs driven by efficient charge carrier transfer effects between the different optically active regions, providing high intense QWR luminescence despite their small volume. This is deduced by a fast rise time of the QWR PL, which is similar to the fast decay-time of adjacent carrier reservoirs. Such processes, feeding the ultra-narrow QWRs with carriers from the relatively large NW, can be the key feature towards realization of future QWR-based devices. While processing of single quantum structures with diameters in the nm range presents a serious obstacle with respect to their integration into electronic or photonic devices, the QWRs presented here can be analyzed and processed using existing techniques developed for single NWs.

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Publication details

The article was received on 30 Oct 2017, accepted on 08 Feb 2018 and first published on 12 Feb 2018

Article type: Paper
DOI: 10.1039/C7NR08057C
Citation: Nanoscale, 2018, Accepted Manuscript
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    Optical Emission of GaN/AlN Quantum-Wires - The Role of Charge Transfer from the Nanowire Template

    J. Müßener, L. A. Th. Greif, S. Kalinowski, G. Callsen, P. Hille, J. Schörmann, M. R. Wagner, A. Schliwa, S. M. Sánchez, J. Arbiol, A. Hoffmann and M. Eickhoff, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C7NR08057C

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