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In situ mechanical resonance behaviour of pristine and defective zinc blende GaAs nanowires


The structural versatility of semiconducting gallium arsenide (GaAs) nanowires (NWs) provides an exciting avenue for engineering of their mechanical and dynamic properties. However, the dynamic behaviour of GaAs NWs remains unexplored. In this study, we conduct comprehensive in situ mechanical resonance tests to explore the dynamic behaviour of pristine and defective zinc blende GaAs NWs. The effects of stacking faults (SFs), amorphous shell, NW tapering and end-mass particles are investigated. The quality factors (QFs) of GaAs NWs are found to be predominately governed by surface effects, increasing linearly with the volume to surface-area ratio. Interestingly, SFs are found not influence QF. To extract the mechanical properties, Euler-Bernoulli beam theory is modified, incorporating the core-shell model, NW tapering and end-mass particles. It is found that the core-shell model accurately predicts the mechanical properties of the pristine GaAs NWs, which exhibit significant stiffening at radii below 50 nm. Conversely, the mechanical properties of the defective NWs are influenced by the presence of SFs, causing a wide variance in Young’s modulus. Apart from establishing an understanding of the resonance behaviour of GaAs NWs, this work provides guidance in the design of NWs for their applications in dynamic nanomechanical devices with tailorable dynamic properties.

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Publication details

The article was received on 07 Oct 2017, accepted on 03 Jan 2018 and first published on 04 Jan 2018

Article type: Paper
DOI: 10.1039/C7NR07449B
Citation: Nanoscale, 2018, Accepted Manuscript
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    In situ mechanical resonance behaviour of pristine and defective zinc blende GaAs nanowires

    E. Pickering, A. Bo, H. Zhan, X. Liao, H. H. Tan and Y. Gu, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C7NR07449B

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