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Substrate-orientation dependent epitaxial growth of highly ordered diamond nanosheet arrays by chemical vapor deposition

Abstract

Three-dimensional ordering of two-dimensional nanomaterials has long been a challenge. Simultaneously, diamond nanomaterials are difficult to synthesize due to the harsh synthesizing conditions required. Here, we report substrate-crystal-orientation dependent growth of diamond nanosheets (DNSs) by chemical vapor deposition, which generates different DNS arrays on different substrates. The DNSs are grown by in-plane epitaxy of diamond {111} planes. So the arrays are highly ordered and solely determined by the spatial orientation of {111} planes in diamond FCC structure. The DNSs grown on {110}, {111}, {001}, and {113} oriented substrates show inclination angles ranging from 90 to 29.5°. The DNSs with larger inclination angles grow preferentially, forming parallelogram arrays with inclination angles of 90° on {110} substrates and parallel-line arrays with inclination angles of 80° on {113} substrates. The density, thickness, size, and morphology of the DNSs have been well controlled. The present understanding and materials are highly promising for many applications such as sensors, catalysis, photonics, thermal management, and electronics.

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Publication details

The article was received on 23 Sep 2017, accepted on 29 Dec 2017 and first published on 02 Jan 2018


Article type: Paper
DOI: 10.1039/C7NR07100K
Citation: Nanoscale, 2018, Accepted Manuscript
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    Substrate-orientation dependent epitaxial growth of highly ordered diamond nanosheet arrays by chemical vapor deposition

    S. Wang, X. Ji, Y. Ao and J. Yu, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C7NR07100K

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