Issue 11, 2018

Reverse-bias-driven whispering gallery mode lasing from individual ZnO microwire/p-Si heterojunction

Abstract

In this paper, electrically driven whispering gallery mode (WGM) lasing was observed from ZnO single microwire (SMW)/p-Si heterojunctions operated at reverse bias. Current–voltage curve exhibits a non-ideal rectification characteristic with a turn-on voltage of about 0.8 V. When the reverse current of 20 mA was applied, several sharp lasing peaks with FWHM as narrow as ∼2 nm appeared in the spectra, which demonstrated that the gain was now large enough to enable the cavity resonant in ZnO SMW. The resonant process, lasing mode and quality factor (Q) were investigated via experiments and theory. The observed discrete lasing peak positions effectively matched the simulated lasing modes. The carrier transport process and light emission mechanism in heterojunctions are also discussed by energy band theory and interface defect.

Graphical abstract: Reverse-bias-driven whispering gallery mode lasing from individual ZnO microwire/p-Si heterojunction

Article information

Article type
Paper
Submitted
15 Sep 2017
Accepted
14 Jan 2018
First published
15 Jan 2018

Nanoscale, 2018,10, 5302-5308

Reverse-bias-driven whispering gallery mode lasing from individual ZnO microwire/p-Si heterojunction

Y. Xu, Y. Li, L. Shi, D. Li, H. Zhang, L. Jin, L. Xu, X. Ma, Y. Zou and J. Yin, Nanoscale, 2018, 10, 5302 DOI: 10.1039/C7NR06872G

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