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Reverse-bias-driven whispering gallery mode lasing from individual ZnO microwire/p-Si heterojunction

Abstract

In this paper, the electrically driven whispering gallery mode (WGM) lasing was observed from ZnO single microwire (SMW)/p-Si heterojunctions operated at reverse bias. Current-voltage curve exhibits a kind of non-ideal rectification characteristics with a turn-on voltage of about 0.8V. As the reverse current applied 20mA, several sharp lasing peaks with FWHM as narrow as ∼2nm appear in the spectra, which demonstrate that the gain is now large enough to enable the cavity resonant in ZnO SMW. The resonant process, lasing mode and quality factor (Q) were investigated in experiment and theory. The observed discrete lasing peak positions match with the simulated lasing modes very well. The carrier transport process and light emission mechanism in heterojunctions have been also discussed by energy band theory and interface defect.

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Publication details

The article was received on 15 Sep 2017, accepted on 14 Jan 2018 and first published on 15 Jan 2018


Article type: Paper
DOI: 10.1039/C7NR06872G
Citation: Nanoscale, 2018, Accepted Manuscript
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    Reverse-bias-driven whispering gallery mode lasing from individual ZnO microwire/p-Si heterojunction

    Y. Xu, Y. Li, L. Shi, D. Li, H. Zhang, L. Xu, X. Ma, L. Jin, Y. Zou and J. Yin, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C7NR06872G

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