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Issue 11, 2018
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Reverse-bias-driven whispering gallery mode lasing from individual ZnO microwire/p-Si heterojunction

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Abstract

In this paper, electrically driven whispering gallery mode (WGM) lasing was observed from ZnO single microwire (SMW)/p-Si heterojunctions operated at reverse bias. Current–voltage curve exhibits a non-ideal rectification characteristic with a turn-on voltage of about 0.8 V. When the reverse current of 20 mA was applied, several sharp lasing peaks with FWHM as narrow as ∼2 nm appeared in the spectra, which demonstrated that the gain was now large enough to enable the cavity resonant in ZnO SMW. The resonant process, lasing mode and quality factor (Q) were investigated via experiments and theory. The observed discrete lasing peak positions effectively matched the simulated lasing modes. The carrier transport process and light emission mechanism in heterojunctions are also discussed by energy band theory and interface defect.

Graphical abstract: Reverse-bias-driven whispering gallery mode lasing from individual ZnO microwire/p-Si heterojunction

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Publication details

The article was received on 15 Sep 2017, accepted on 14 Jan 2018 and first published on 15 Jan 2018


Article type: Paper
DOI: 10.1039/C7NR06872G
Citation: Nanoscale, 2018,10, 5302-5308
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    Reverse-bias-driven whispering gallery mode lasing from individual ZnO microwire/p-Si heterojunction

    Y. Xu, Y. Li, L. Shi, D. Li, H. Zhang, L. Jin, L. Xu, X. Ma, Y. Zou and J. Yin, Nanoscale, 2018, 10, 5302
    DOI: 10.1039/C7NR06872G

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