Jump to main content
Jump to site search


Effect of Al doping concentration on structural, optical, morphological and electrical properties of V2O5 nanostructures

Abstract

Study on the optoelectronic characteristics of cation-substituted nanostructure is a specific area of recent interest for a wide range of photonic applications. In the present work, the AlxV2O5 (where x=0, 5, 10 and 15%) nanoparticles were synthesized by wet chemical-calcination process. X-ray diffraction study revealed the orthorhombic phase of 600oC heat-treated pure and Al3+ substituted samples. The shifting of the XRD lines with the substitution of V2O5 suggests that Al3+ were successfully entered into the V2O5 host lattice. The SEM and TEM images show that the pure and Al3+ doped V2O5 hierarchical architectures are established by the one-dimensional nanorods. Photoluminescence spectra demonstrated the increment in deformities revealed by the immense enhanced green emission. DC conductivity studies were performed in the temperature range 30-130oC and it was found that the activation energy (Ea) is higher for AlxV2O5 than undoped sample. The inherent current (I)–voltage (V) characteristics of pure and AlxV2O5 junction diodes showed a nonlinear diode behavior like. The transient photocurrent under illumination is higher than the dark current indicating that the fabricated diodes behave as a photodiode.

Back to tab navigation

Publication details

The article was received on 25 Sep 2017, accepted on 29 Jan 2018 and first published on 30 Jan 2018


Article type: Paper
DOI: 10.1039/C7NJ03607H
Citation: New J. Chem., 2018, Accepted Manuscript
  •   Request permissions

    Effect of Al doping concentration on structural, optical, morphological and electrical properties of V2O5 nanostructures

    I. Pradeep, E. Ranjith Kumar, S. N, K. Mohanraj, S. Ch and M. V. K. Mehar, New J. Chem., 2018, Accepted Manuscript , DOI: 10.1039/C7NJ03607H

Search articles by author

Spotlight

Advertisements