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Tin dioxide quantum dots coupled with graphene enabled high-performance bulk-silicon Schottky photodetector

Abstract

Commercial photodetectors have been dominated by bulk silicon (B-Si) due to the mature Si technology. However, the relatively poor mobility has impeded B-Si for high-performance applications. Here, we demonstrate that tin dioxide quantum dots (SnO2-QDs) coupled with graphene produce a Schottky junction with B-Si to enormously promote the performance of the SnO2-QDs/graphene/B-Si Schottky photodetector. This hybrid device is sensitive to a broadband illumination covering UV-vis-NIR and shows a high responsivity of 967.6 A/W (near 4 orders higher than that of commercial B-Si Schottky photodetectors), with the corresponding external quantum efficiency of 2.3 × 105 % and detectivity of 1.8 × 1013 Jones. In addition, the hybrid device manifests a fast rise and decay time of 0.1 and 0.23 ms, respectively. These figures-of-merits are among the best values of the recently reported B-Si Schottky photodetectors. We also establish that the superior performances are attributed to the strong light absorption of the hybrid structure and the increased built-in potential of the graphene/B-Si Schottky junction, which allows efficient separation of photoexcited electron-hole pairs. These findings pave the way toward the rational design of optoelectronic devices from the synergetic effect of 2D materials as well as 0D and 3D semiconductors.

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Publication details

The article was accepted on 15 May 2018 and first published on 16 May 2018


Article type: Communication
DOI: 10.1039/C8MH00500A
Citation: Mater. Horiz., 2018, Accepted Manuscript
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    Tin dioxide quantum dots coupled with graphene enabled high-performance bulk-silicon Schottky photodetector

    Z.Q. Zheng, J.D. Yao, L. Zhu, W. Jiang, B. Wang, G. Yang and J. Li, Mater. Horiz., 2018, Accepted Manuscript , DOI: 10.1039/C8MH00500A

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