Jump to main content
Jump to site search


Two-step electrodeposition to fabricate p-n heterojunction of Cu2O/BiVO4 photoanode for enhancement of photoelectrochemical water splitting

Abstract

The Cu2O/BiVO4 p-n heterojunction as photoanode in photoelectrochemical (PEC) water splitting is fabricated for the first time by two-step electrodepositing and annealing method, n-type BiVO4 followed by p-type Cu2O in sequence on FTO substrate. The structure and the property of the samples are characterized by XRD, FESEM, HRTEM, XPS and UV-visible spectra. The photoelectrochemical activity of the samples is investigated in a three electrode quartz cell system and maximum photocurrent density of 1.72 mA·cm-2 at 1.23 V vs RHE was obtained for the Cu2O/BiVO4 heterojunction, which is 4.5 times higher than that of pristine BiVO4 thin films (~0.38 mA·cm-2). The heterojunction photoanode also exhibits a tremendous cathodic shift of the onset potential (~420 mV) and enhancement in the IPCE value by more than 4-fold. The enhanced photoelectrochemical properties of the Cu2O/BiVO4 photoelectrode are attributed to the efficient separation of the photoexcited electron-hole pairs caused by inner electronic field (IEF) of p-n junction.

Back to tab navigation

Publication details

The article was received on 11 Nov 2017, accepted on 05 Apr 2018 and first published on 17 Apr 2018


Article type: Paper
DOI: 10.1039/C7DT04258B
Citation: Dalton Trans., 2018, Accepted Manuscript
  •   Request permissions

    Two-step electrodeposition to fabricate p-n heterojunction of Cu2O/BiVO4 photoanode for enhancement of photoelectrochemical water splitting

    S. Bai, J. Liu, M. Cui, R. Luo, J. He and A. Chen, Dalton Trans., 2018, Accepted Manuscript , DOI: 10.1039/C7DT04258B

Search articles by author

Spotlight

Advertisements