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Issue 8, 2018
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Tin(IV) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE2 and SnE (E = S, Se) thin films

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Abstract

The molecular Sn(IV) complexes, [SnCl4{nBuS(CH2)3SnBu}] (2), [SnCl4(nBu2S)2] (3) and [SnCl4(nBu2Se)2] (4) have been prepared in good yield from reaction of SnCl4 with the appropriate chalcogenoether ligand in anhydrous hexane and, together with the known [SnCl4{nBuSe(CH2)3SenBu}] (1), employed as single source precursors for the low pressure chemical vapour deposition of the corresponding tin dichalcogenide thin films. At elevated temperatures the bidentate ligand precursors, (1) and (2), also form the tin monochalcogenides, SnSe and SnS, respectively. In contrast, (3) gave a mixture of phases, SnS2, Sn2S3 and SnS and (4) gave SnSe2 only. The morphologies, elemental compositions and crystal structures of the resulting films have been determined by scanning electron microscopy, energy dispersive X-ray spectroscopy, grazing incidence X-ray diffraction and Raman spectroscopy. Van der Pauw measurements on the SnS2, SnS and SnSe2 films confirm their resistivities to be 2.9(9), 266(3) and 4.4(3) Ω cm, respectively.

Graphical abstract: Tin(iv) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE2 and SnE (E = S, Se) thin films

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Publication details

The article was received on 12 Oct 2017, accepted on 10 Nov 2017 and first published on 02 Feb 2018


Article type: Paper
DOI: 10.1039/C7DT03848H
Citation: Dalton Trans., 2018,47, 2628-2637
  • Open access: Creative Commons BY license
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    Tin(IV) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE2 and SnE (E = S, Se) thin films

    C. Gurnani, S. L. Hawken, A. L. Hector, R. Huang, M. Jura, W. Levason, J. Perkins, G. Reid and G. B. G. Stenning, Dalton Trans., 2018, 47, 2628
    DOI: 10.1039/C7DT03848H

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