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Recent progress in 2D group-VA semiconductors: from theory to experiment

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Abstract

Phosphorene, an emerging two-dimensional material, has received considerable attention due to its layer-controlled direct bandgap, high carrier mobility, negative Poisson's ratio and unique in-plane anisotropy. As cousins of phosphorene, 2D group-VA arsenene, antimonene and bismuthene have also garnered tremendous interest due to their intriguing structures and fascinating electronic properties. 2D group-VA family members are opening up brand-new opportunities for their multifunctional applications encompassing electronics, optoelectronics, topological spintronics, thermoelectrics, sensors, Li- or Na-batteries. In this review, we extensively explore the latest theoretical and experimental progress made in the fundamental properties, fabrications and applications of 2D group-VA materials, and offer perspectives and challenges for the future of this emerging field.

Graphical abstract: Recent progress in 2D group-VA semiconductors: from theory to experiment

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Publication details

The article was received on 09 Apr 2017 and first published on 06 Dec 2017


Article type: Review Article
DOI: 10.1039/C7CS00125H
Citation: Chem. Soc. Rev., 2018, Advance Article
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    Recent progress in 2D group-VA semiconductors: from theory to experiment

    S. Zhang, S. Guo, Z. Chen, Y. Wang, H. Gao, J. Gómez-Herrero, P. Ares, F. Zamora, Z. Zhu and H. Zeng, Chem. Soc. Rev., 2018, Advance Article , DOI: 10.1039/C7CS00125H

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