Jump to main content
Jump to site search


Interface engineering and solid-state organization for triindole-based p-type Organic Thin-Film Transistors

Abstract

Inspired by the excellent device performance of triindole-based semiconductors in electronic and optoelectronic devices, the relationship between the solid-state organization and the charge-transporting properties of an easy accessible series of triindole derivatives is reported herein. Vacuum-evaporated organic thin-film transistors (OTFTs) exhibited a non ideal behaviour with a double slope in the saturation curves. Moreover, the treatment of the gate insulator of the OTFT device with either a self-assembled monolayer (SAM) or a polymer controls the molecular growth and the film morphology of the semiconducting layer as shown by X-ray diffraction (XRD) analyses, atomic force microscopy (AFM) and theoretical calculations. N-Trihexyltriindole exhibited the best device performance with hole mobilities up to 0.1 cm2 V–1 s–1 at low VG range and up to 0.01 cm2 V–1 s–1 at high VG, as well as enhanced Ion/Ioff ratios around 106. The results suggest that the non-ideal behaviour of the here studied OTFT devices could be related to the higher interfacial disorder in comparison to that in the bulk.

Back to tab navigation

Supplementary files

Publication details

The article was received on 04 May 2018, accepted on 07 Jun 2018 and first published on 07 Jun 2018


Article type: Paper
DOI: 10.1039/C8CP02963F
Citation: Phys. Chem. Chem. Phys., 2018, Accepted Manuscript
  •   Request permissions

    Interface engineering and solid-state organization for triindole-based p-type Organic Thin-Film Transistors

    D. Velasco Castrillo, M. Reig, J. Puigdollers, G. Bagdziunas and A. Ramanavicius, Phys. Chem. Chem. Phys., 2018, Accepted Manuscript , DOI: 10.1039/C8CP02963F

Search articles by author

Spotlight

Advertisements