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Interface engineering and solid-state organization for triindole-based p-type organic thin-film transistors

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Abstract

Inspired by the excellent device performance of triindole-based semiconductors in electronic and optoelectronic devices, the relationship between the solid-state organization and the charge-transporting properties of an easily accessible series of triindole derivatives is reported herein. The vacuum-evaporated organic thin-film transistors (OTFTs) exhibited a non ideal behaviour with a double slope in the saturation curves. Moreover, the treatment of the gate insulator of the OTFT device with either a self-assembled monolayer (SAM) or a polymer controls the molecular growth and the film morphology of the semiconducting layer, as shown by X-ray diffraction (XRD) analyses, atomic force microscopy (AFM) and theoretical calculations. N-Trihexyltriindole exhibited the best device performance with hole mobilities up to 0.1 cm2 V−1 s−1 at the low VG range and up to 0.01 cm2 V−1 s−1 at high VG, as well as enhanced Ion/Ioff ratios of around 106. The results suggest that the non-ideal behaviour of the here studied OTFT devices could be related to the higher interfacial disorder in comparison to that in the bulk.

Graphical abstract: Interface engineering and solid-state organization for triindole-based p-type organic thin-film transistors

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Publication details

The article was received on 04 May 2018, accepted on 07 Jun 2018 and first published on 07 Jun 2018


Article type: Paper
DOI: 10.1039/C8CP02963F
Citation: Phys. Chem. Chem. Phys., 2018, Advance Article
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    Interface engineering and solid-state organization for triindole-based p-type organic thin-film transistors

    M. Reig, G. Bagdziunas, A. Ramanavicius, J. Puigdollers and D. Velasco, Phys. Chem. Chem. Phys., 2018, Advance Article , DOI: 10.1039/C8CP02963F

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