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Enhancement of Field Electron Emission in Topological Insulator Bi2Se3 by Ni Doping

Abstract

Nanostructures of Bismuth Selenide (Bi2Se3), a 3D topological insulator material and Nickel (Ni) doped Bi2Se3 samples were prepared by a hydrothermal method to explore the field emission properties. An enrichment in the field electron emission (FE) properties in terms of threshold and turn on fields of Bi2Se3 and Ni doped Bi2Se3 nanostructures were measured at a base pressure of ~ 1 X 10-8 mbar. Using the background of Fowler–Nordheim (FN) theory a field enhancement factor (β) of 5.7 x 103 and threshold field of of 2.5 Vμm-1 for 7.5 % Ni doped Bi2Se3 have been assessed by investigating the J–E plot of FE data. The value of β is three times higher than that of pure Bi2Se3 confirming superior FE properties. The emission current was found to be very stable and has a property of long standing durability since the negligible amount of variation is observed when measured at a constant value of 5 mA for 3 hours. The experimental results signify many opportunities for potential applications of Ni doped Bi2Se3 as the source of electrons in scanning as well as transmission electron microscopy, flat panel displays and as a X ray generator.

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Publication details

The article was received on 27 Mar 2018, accepted on 08 Jun 2018 and first published on 08 Jun 2018


Article type: Paper
DOI: 10.1039/C8CP01982G
Citation: Phys. Chem. Chem. Phys., 2018, Accepted Manuscript
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    Enhancement of Field Electron Emission in Topological Insulator Bi2Se3 by Ni Doping

    K. Mazumder, A. Sharma, Y. Kumar, P. Bankar, M. A. More, R. S. Devan and P. M. Shirage, Phys. Chem. Chem. Phys., 2018, Accepted Manuscript , DOI: 10.1039/C8CP01982G

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