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Issue 26, 2018
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Robust band gaps in the graphene/oxide heterostructure: SnO/graphene/SnO

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Abstract

The applicability of graphene in nanoscale devices is somewhat limited because of the absence of a finite band gap. To overcome this limitation of zero band gap, we consider vertically-stacked heterostructures consisting of graphene and SnO knowing that two-dimensional SnO films were synthesized recently. Calculations based on density functional theory find that the oxide monolayer can induce a notable band gap in graphene; 115 meV in SnO/graphene/SnO heterostructures. Additionally, the band gap of graphene can be maintained under a relatively high electric field (≈109 V m−1) applied to the heterostructures because of the electrostatic screening effect of the oxide layer. The calculated results suggest the relative superiority of the graphene/oxide heterostructures over graphene/BN heterostructures for the nanoscale devices based on graphene.

Graphical abstract: Robust band gaps in the graphene/oxide heterostructure: SnO/graphene/SnO

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Publication details

The article was received on 06 Mar 2018, accepted on 06 Jun 2018 and first published on 06 Jun 2018


Article type: Paper
DOI: 10.1039/C8CP01483C
Citation: Phys. Chem. Chem. Phys., 2018,20, 17983-17989
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    Robust band gaps in the graphene/oxide heterostructure: SnO/graphene/SnO

    Q. Guo, G. Wang, R. Pandey and S. P. Karna, Phys. Chem. Chem. Phys., 2018, 20, 17983
    DOI: 10.1039/C8CP01483C

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