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Robust band gaps in the graphene/oxide heterostructures–SnO/graphene/SnO

Abstract

Graphene’s applicability in nanoscale devices is somewhat limited because of the absence of a finite band gap. To overcome this limitation of zero band gap, we consider the vertically-stacked heterostructures consisted of graphene and SnO knowing that two-dimensional SnO films were synthesized recently. Calculations based on density functional theory find that the oxide monolayer can induce a noticeable band gap in graphene; the gap is 45 meV in graphene/SnO/graphene and 115 meV in SnO/graphene/SnO heterostructures. Additionally, graphene’s band gap can be maintained under a relatively high electric field (≈109 V/m) applied to the heterostructures because of the electrostatic screening effect of the oxide layer. The calculated results suggest relative superiority of the graphene/oxide heterostructures over graphene/BN heterostructures for the nanoscale devices based on graphene.

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Publication details

The article was received on 06 Mar 2018, accepted on 06 Jun 2018 and first published on 06 Jun 2018


Article type: Paper
DOI: 10.1039/C8CP01483C
Citation: Phys. Chem. Chem. Phys., 2018, Accepted Manuscript
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    Robust band gaps in the graphene/oxide heterostructures–SnO/graphene/SnO

    Q. Guo, G. Wang, R. Pandey and S. P. Karna, Phys. Chem. Chem. Phys., 2018, Accepted Manuscript , DOI: 10.1039/C8CP01483C

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