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Issue 16, 2018
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Silicene and germanene on InSe substrates: structures and tunable electronic properties

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Abstract

Using first-principles calculations, we show that the recently synthesized two-dimensional (2D) van der Waals layered material indium selenide (InSe) nanosheets can serve as a suitable substrate for silicene and germanene, which form commensurate and stable silicene/InSe (Si/InSe) and germanene/InSe (Ge/InSe) heterolayers (HLs). The buckled honeycomb geometries and Dirac-cone-like band structures of silicene and germanene are well preserved in these HLs. The interaction between silicene (or germanene) and the InSe substrate opens up a band gap of 141 meV (or 149 meV) at the Dirac points, while electron effective masses (EEM) remain as small as 0.059 and 0.067 times the free-electron mass (m0). The band gap and the EEM of the HLs can be further modulated effectively by applying an external electric field or strain. These features are attributed to the built-in electric field due to the interlayer charge transfer of the HLs which breaks the equivalence of the two sublattices of silicene and germanene. Multilayer (ML) InSe substrates have also been considered. We also proposed a parallel plate capacitor model to describe the interaction between silicene (or germanene) and the InSe substrate as well as the electronic band structure modification in response to an external field. This work is expected to offer an ideal substrate material for the growth of silicene and germanene and a promising van der Waals (vdW) layered heterostructure for electronic devices.

Graphical abstract: Silicene and germanene on InSe substrates: structures and tunable electronic properties

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Publication details

The article was received on 27 Jan 2018, accepted on 20 Mar 2018 and first published on 21 Mar 2018


Article type: Paper
DOI: 10.1039/C8CP00610E
Citation: Phys. Chem. Chem. Phys., 2018,20, 11369-11377
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    Silicene and germanene on InSe substrates: structures and tunable electronic properties

    Y. Fan, X. Liu, J. Wang, H. Ai and M. Zhao, Phys. Chem. Chem. Phys., 2018, 20, 11369
    DOI: 10.1039/C8CP00610E

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