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Tuning the Electronic and Magnetic Properties of InSe Nanosheets by Transition Metal Doping

Abstract

Magnetic two-dimensional materials have attracted considerable attention for their significant potential application in spintronics. Here, we systematically study the electronic structures and magnetic properties of 3d transition metal doped InSe monolayer based on the density functional theory (DFT). Our results show that InSe monolayer can be turned into a half-metal when Ti, Cr, or Ni atom is doped. Further calculations indicate that Cr-InSe monolayer possesses robust ferromagnetic ground state due to the effective p-d exchange. The predicted Curie temperature of Cr-InSe is above the room temperature, showing powerful potential in spintronics. The application in spin valve is also explored using quantum transport simulations. Our results indicate that the magnetoresistance of a Cr-InSe spin valve attains 100% due to the half-metallic characteristics. These findings may pave the way for designing 2D nano-devices for future spin transport applications.

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Publication details

The article was received on 11 Jan 2018, accepted on 13 Feb 2018 and first published on 13 Feb 2018


Article type: Paper
DOI: 10.1039/C8CP00219C
Citation: Phys. Chem. Chem. Phys., 2018, Accepted Manuscript
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    Tuning the Electronic and Magnetic Properties of InSe Nanosheets by Transition Metal Doping

    T. Wang, J. Li, H. Jin and Y. Wei, Phys. Chem. Chem. Phys., 2018, Accepted Manuscript , DOI: 10.1039/C8CP00219C

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