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Issue 11, 2018
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Tuning the electronic and magnetic properties of InSe nanosheets by transition metal doping

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Abstract

Magnetic two-dimensional materials have attracted considerable attention for their significant potential application in spintronics. Here, we systematically study the electronic structures and magnetic properties of a 3d transition metal doped InSe monolayer based on density functional theory (DFT). Our results show that InSe monolayer can be turned into a half-metal when the Ti, Cr, or Ni atom is doped. Further calculations indicate that the Cr-InSe monolayer possesses a robust ferromagnetic ground state due to the effective p–d exchange. The predicted Curie temperature of Cr-InSe is above the room temperature, showing a powerful potential in spintronics. Application in the spin valve is also explored using quantum transport simulations. Our results indicate that the magnetoresistance of a Cr-InSe spin valve attains 100% due to the half-metallic characteristics. These findings may pave the way for designing 2D nano-devices for future spin transport applications.

Graphical abstract: Tuning the electronic and magnetic properties of InSe nanosheets by transition metal doping

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Publication details

The article was received on 11 Jan 2018, accepted on 13 Feb 2018 and first published on 13 Feb 2018


Article type: Paper
DOI: 10.1039/C8CP00219C
Citation: Phys. Chem. Chem. Phys., 2018,20, 7532-7537
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    Tuning the electronic and magnetic properties of InSe nanosheets by transition metal doping

    T. Wang, J. Li, H. Jin and Y. Wei, Phys. Chem. Chem. Phys., 2018, 20, 7532
    DOI: 10.1039/C8CP00219C

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