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Morphology-controlled epitaxial vanadium dioxide low-dimensional structures: The delicate effects on the phase transition behaviors

Abstract

As an important strongly correlated electron material, VO2 undergoes a metal-insulator transition (MIT) accompanied by a huge change of several orders of magnitude in conductance and transmittance. The MIT behavior can be controlled by low-dimensional structures (LDSs) and interaction between LDS and substrate. Consequently, fabricating the LDSs and understanding the phase transition behaviors have great significance for investigation of fundamental properties and applications. Using the pulsed laser deposition technique, we fabricate abundant LDSs (i.e., from zero-dimensional nanodots, one-dimensional nanowires, nanobelts and nanorods to two-dimensional nanoplatelets and ultra-thin films, zero-/one-/two-dimensional mixed structures), and investigate the controllability of each deposition factor on the growth of LDSs. TEM results confirm the high crystallinity of the as-synthesized LDSs. AFM results and ab-initio calculations demonstrate a great influence of substrate on the growth orientation of LDSs. More importantly, we systematically investigate the phase transition characteristics of LDSs by temperature-dependent Raman spectra and XRD. The results clearly reveal the structural dependence of the phase transition features due to the delicate effects of substrates and structures. Our technique provides a rapid, controllable and easy method for fabricating VO2 LDSs, which can lead to a deeper understanding of electrical, optical, magnetic properties and potential applications of VO2.

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Publication details

The article was received on 17 Dec 2017, accepted on 29 Mar 2018 and first published on 06 Apr 2018


Article type: Paper
DOI: 10.1039/C7CP08432C
Citation: Phys. Chem. Chem. Phys., 2018, Accepted Manuscript
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    Morphology-controlled epitaxial vanadium dioxide low-dimensional structures: The delicate effects on the phase transition behaviors

    W. M. Xiong, J. Shao, Y. Q. Zhang, Y. Chen, X. Y. Zhang, W. Chen and Y. Zheng, Phys. Chem. Chem. Phys., 2018, Accepted Manuscript , DOI: 10.1039/C7CP08432C

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