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Investigation of multi-bunching by generating multi-order fluorescence of NV center in diamond

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Abstract

Fabricating electronics from solid-state quantum emitters is a promising strategy for the miniaturization and integration of electronic devices. However, the practical realization of solid-state quantum devices and circuits for signal transmission and processing at room temperature has remained challenging. Herein, we investigated the multi-bunching phenomenon by generating multi-order fluorescence from a pseudo-thermal source at room temperature using the nitrogen-vacancy (NV) center in diamond. We demonstrate the shift in time of multi-bunching by controlling the effect of dressing to realize logical gates and transistor switching operations. We also suggest the optimization of the time propagation delay (TPD) of the gate circuit by changing the boxcar gate position.

Graphical abstract: Investigation of multi-bunching by generating multi-order fluorescence of NV center in diamond

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Publication details

The article was received on 29 Nov 2017, accepted on 23 Jan 2018 and first published on 23 Jan 2018


Article type: Paper
DOI: 10.1039/C7CP08005K
Citation: Phys. Chem. Chem. Phys., 2018, Advance Article
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    Investigation of multi-bunching by generating multi-order fluorescence of NV center in diamond

    H. Tang, I. Ahmed, P. Puttapirat, T. Wu, Y. lan, Y. Zhang and E. Li, Phys. Chem. Chem. Phys., 2018, Advance Article , DOI: 10.1039/C7CP08005K

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