Jump to main content
Jump to site search


Nonvolatile ternary resistive switching memory devices based on the polymer composites containing zinc oxide nanoparticles

Author affiliations

Abstract

Nonvolatile ternary memory devices were fabricated from the composites polymer blends containing zinc oxide (ZnO) nanoparticles. When applying a negative bias on the top electrode, the fabricated devices with a simple sandwich structure of indium tin oxide (ITO)/composite polymer/aluminum (Al) exhibited three distinct resistance states, which could be labeled as “OFF”, “ON1” and “ON2” for ternary data storage application. The ITO/polystyrene (PS) + ZnO/Al devices can endure 3 × 104 read-cycles and exhibit a retention time of 104 s. The resistance-temperature dependence at different resistance states was investigated to confirm the temperature-dependent properties. The resistance of the “OFF” and “ON1” state reveals negative temperature dependence, manifesting a typical semiconductor characteristic. The resistance of the “ON2” state exhibits positive temperature dependence, showing metallic properties.

Graphical abstract: Nonvolatile ternary resistive switching memory devices based on the polymer composites containing zinc oxide nanoparticles

Back to tab navigation

Publication details

The article was received on 23 Nov 2017, accepted on 24 Jan 2018 and first published on 24 Jan 2018


Article type: Paper
DOI: 10.1039/C7CP07887K
Citation: Phys. Chem. Chem. Phys., 2018, Advance Article
  •   Request permissions

    Nonvolatile ternary resistive switching memory devices based on the polymer composites containing zinc oxide nanoparticles

    Y. Sun, D. Wen and X. Bai, Phys. Chem. Chem. Phys., 2018, Advance Article , DOI: 10.1039/C7CP07887K

Search articles by author

Spotlight

Advertisements