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Large valley polarization in monolayer MoTe2 on a magnetic substrate

Abstract

On the basis of valley degree of freedom, there would be immense potential application in valleytronics. Introducing magnetism into triangular or hexagonal lattices is a promising route to realize the valley polarization, indispensable to apply the valley degree of freedom. In this work, we explore the valley polarization by putting forward a heterostructure of a MoTe2 monolayer on a (0 0 1) surface of an antiferromagnetic RbMnCl3 substrate. The first principles calculations show that due to proximity-induced Zeeman effects, the MoTe2 monolayer is magnetized drastically by the topmost Mn layer in the substrate and a very large valley splitting (about 109 meV) is achieved. How the competition of the spin-orbit coupling (SOC) and exchange field in the system affects the valley polarization is investigated also from an effective Hamiltonian model. The magnitude of the valley splitting is found to be limited by the smaller value of the SOC and the induced exchange field, giving the clue to enhance the valley polarization. A device rudiment with an anomalous valley Hall effect is proposed.

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Publication details

The article was received on 11 Nov 2017, accepted on 04 Jan 2018 and first published on 05 Jan 2018


Article type: Paper
DOI: 10.1039/C7CP07610J
Citation: Phys. Chem. Chem. Phys., 2018, Accepted Manuscript
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    Large valley polarization in monolayer MoTe2 on a magnetic substrate

    N. Li, J. Zhang, Y. Xue, T. Zhou and Z. Yang, Phys. Chem. Chem. Phys., 2018, Accepted Manuscript , DOI: 10.1039/C7CP07610J

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