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Issue 5, 2018
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Large valley polarization in monolayer MoTe2 on a magnetic substrate

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Abstract

On the basis of valley degree of freedom, there would be immense potential application in valleytronics. Introducing magnetism into triangular or hexagonal lattices is a promising route to realize valley polarization, which is indispensable for applying the valley degree of freedom. In this study, we explored valley polarization by depositing a heterostructure of a MoTe2 monolayer on the (0 0 1) surface of an antiferromagnetic RbMnCl3 substrate. First principles-calculations showed that due to proximity-induced Zeeman effects, the MoTe2 monolayer was drastically magnetized by the topmost Mn layer in the substrate and a very large valley splitting (about 109 meV) was achieved. Using an effective Hamiltonian model, the effect of the competition of the spin–orbit coupling (SOC) and exchange field in the system on the valley polarization was also investigated. The magnitude of the valley splitting was found to be limited by the smaller SOC value and the induced exchange field, providing information on the enhancement of the valley polarization. A device rudiment with an anomalous valley Hall effect is proposed.

Graphical abstract: Large valley polarization in monolayer MoTe2 on a magnetic substrate

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Publication details

The article was received on 11 Nov 2017, accepted on 04 Jan 2018 and first published on 05 Jan 2018


Article type: Paper
DOI: 10.1039/C7CP07610J
Citation: Phys. Chem. Chem. Phys., 2018,20, 3805-3812
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    Large valley polarization in monolayer MoTe2 on a magnetic substrate

    N. Li, J. Zhang, Y. Xue, T. Zhou and Z. Yang, Phys. Chem. Chem. Phys., 2018, 20, 3805
    DOI: 10.1039/C7CP07610J

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