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Issue 28, 2018
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Formation of in situ HVPE a-plane GaN nanodots: effects on the structural properties of a-plane GaN templates

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Abstract

In situ a-plane GaN nanodots were formed on r-plane sapphire substrates to obtain a-plane GaN layers by using hydride vapor phase epitaxy (HVPE). The size and density of the GaN nanodots influence the juncture of the 2D growth of a-plane GaN, thus determining the density of threading dislocations and stacking faults as well as the surface morphology in growing a-plane GaN layers. Faster agglomeration in a-plane GaN layers via GaN nanodots with small size and high density leads to a decrease in the density of threading dislocations. A higher number of grain boundaries formed by nanodots with small size and high density are also responsible for a reduction in the number of stacking faults. Furthermore, we infer that the reduced atomic migration length difference of Ga and N along the c-axis and m-axis directions in GaN nanodots formed at low growth temperatures improved the surface morphology of a-plane GaN layers via the formation of a-plane GaN islands with an isotropic shape. We believe that this approach will provide a simple and efficient way to control the structural defects and surface undulations of a-plane GaN layers without any complex processes or additional expense.

Graphical abstract: Formation of in situ HVPE a-plane GaN nanodots: effects on the structural properties of a-plane GaN templates

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Publication details

The article was received on 12 Apr 2018, accepted on 12 Jun 2018 and first published on 14 Jun 2018


Article type: Paper
DOI: 10.1039/C8CE00583D
Citation: CrystEngComm, 2018,20, 4036-4041
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    Formation of in situ HVPE a-plane GaN nanodots: effects on the structural properties of a-plane GaN templates

    M. Lee, M. Yang, J. Wi and S. Park, CrystEngComm, 2018, 20, 4036
    DOI: 10.1039/C8CE00583D

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