Jump to main content
Jump to site search

Evolution of Lateral V-defects on InGaN/GaN on Si(111) during PAMBE: A Role of Strain on Defect Kinetics


In this article, a unique correlation has been established between the defect kinetics of III-nitride adatoms and strain during plasma assisted molecular beam epitaxial (PAMBE) growth of InGaN/GaN heterostructure on silicon (111) for the first time. This association identifies the possible causes for the evolution of V-defects in nitrides. While cross-sectional observations using transmission electron microscopy (TEM) exhibit common vertical V-defects, planar view of the heterostructures reveals a novel lateral V-defects under field emission scanning electron microscope (FESEM). Additionally, density and size of both types of V-defects are found to get altered dramatically above the critical thickness of the InGaN. Asymmetric (105) reciprocal space mapping (RSM) is used to represent the gradual minimization of strain with the increase of InGaN thickness. Auto correlation length, as obtained from power spectral density (PSD) analysis of atomic force microscopy (AFM) topography, quantifies coalescence of the pits and defects with the relaxation of InGaN on GaN. It is proposed that primarily non-threading dislocation (TD) terminating mobile hexagonal pits with varying depth coalesced to form the lateral V-defects. The vertexes of these lateral V-defects on surface are likely to be connected to TD as emanating from the buried GaN. The strain relaxation is also accounted for anisotropy in lateral InGaN growth, which consequently leads to alloy inhomogeneity of InGaN as detailed by energy dispersion spectroscopy (EDS). The defects may be used to texture the InGaN surface during in-situ for photonic applications.

Back to tab navigation

Publication details

The article was received on 11 Apr 2018, accepted on 14 Jun 2018 and first published on 14 Jun 2018

Article type: Paper
DOI: 10.1039/C8CE00577J
Citation: CrystEngComm, 2018, Accepted Manuscript
  •   Request permissions

    Evolution of Lateral V-defects on InGaN/GaN on Si(111) during PAMBE: A Role of Strain on Defect Kinetics

    A. Bag, S. Das, R. Kumar and D. Biswas, CrystEngComm, 2018, Accepted Manuscript , DOI: 10.1039/C8CE00577J

Search articles by author