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Identification of the cubic-to-hexagonal phase transition for the production of stable zinc oxynitride layers

Abstract

Zinc oxynitride layers are becoming popular as semiconductor materials for thin film transistors. However, the formation of these ternary phases with high N content is challenging because of the different crystalline structures and stability of the binaries involved. In this work we study both the formation and stability of ternary ZnOxNy phases grown by RF sputtering at different oxygen flux ratios (f). The preferential incorporation of O in the layers is confirmed even for small f values. A singular X-ray amorphous phase is detected for f=1.7%, denoting the transition towards the hexagonal phase. The exact composition of this phase is accurately determined by elastic recoil detection analysis with time-of-flight telescope, finding a maximum content of 11% N. For contents below it, all the phases show clear hexagonal signatures in the diffractograms. These hexagonal phases exhibit more than one absorption edge, indicating the formation of a diluted ternary phase into a predominant ZnO matrix. Due to this diluted character of the ternary phase all the ZnOxNy layers have a remarkable stability upon humid environments.

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Publication details

The article was received on 12 Mar 2018, accepted on 14 May 2018 and first published on 14 May 2018


Article type: Paper
DOI: 10.1039/C8CE00390D
Citation: CrystEngComm, 2018, Accepted Manuscript
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    Identification of the cubic-to-hexagonal phase transition for the production of stable zinc oxynitride layers

    M. Gómez-Castaño, J. L. Pau and A. Redondo-Cubero, CrystEngComm, 2018, Accepted Manuscript , DOI: 10.1039/C8CE00390D

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