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Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition

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Abstract

Monocrystalline, low-defect density Si thin films were successfully fabricated via epitaxy with 1 minute rapid vapor deposition on a porous seed layer. Zone heating recrystallization reduced the surface roughness of the seed layer to sub-nanometer size. The critical effect of roughness on the defect density of epitaxial films was confirmed.

Graphical abstract: Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition

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Publication details

The article was received on 14 Dec 2017, accepted on 05 Feb 2018 and first published on 15 Feb 2018


Article type: Communication
DOI: 10.1039/C7CE02162C
Citation: CrystEngComm, 2018, Advance Article
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    Critical effect of nanometer-size surface roughness of a porous Si seed layer on the defect density of epitaxial Si films for solar cells by rapid vapor deposition

    K. Hasegawa, C. Takazawa, M. Fujita, S. Noda and M. Ihara, CrystEngComm, 2018, Advance Article , DOI: 10.1039/C7CE02162C

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