Jump to main content
Jump to site search

Reactive chemical vapor deposition of heteroepitaxial Ti1-xAlxN films


Processing of Ti1-xAlxN thin films by the Reactive Chemical Vapor Deposition (R-CVD) technique has been performed from the reaction between a titanium tetrachloride TiCl4 - H2 gas mixture and (0001) c-plane monocrystalline aluminium nitride (AlN) films at high temperatures, in the 800°C-1200°C range. As a typical result, the growth of epitaxial 70 nm thick layers with (111)-fcc Ti1-xAlxN (0.05=x=0.65) has been processed. Multicomponent mass transport and diffusion modelling is proposed to assess the experimental results. A good agreement is found between the experimental thickness of the transformed zones and the calculated titanium diffusion length in AlN. Fcc-Ti1-xAlxN phase formation can be regarded as a diffusion-controlled mechanism. The novel experimental methodology developed in this work could help in understanding the complex formation and stability of this technological important material.

Back to tab navigation

Supplementary files

Publication details

The article was received on 08 Dec 2017, accepted on 12 Feb 2018 and first published on 12 Feb 2018

Article type: Paper
DOI: 10.1039/C7CE02129A
Citation: CrystEngComm, 2018, Accepted Manuscript
  •   Request permissions

    Reactive chemical vapor deposition of heteroepitaxial Ti1-xAlxN films

    F. Mercier, H. Shimoda, S. lay, E. Blanquet and M. Pons, CrystEngComm, 2018, Accepted Manuscript , DOI: 10.1039/C7CE02129A

Search articles by author