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Reactive chemical vapor deposition of heteroepitaxial Ti1-xAlxN films

Abstract

Processing of Ti1-xAlxN thin films by the Reactive Chemical Vapor Deposition (R-CVD) technique has been performed from the reaction between a titanium tetrachloride TiCl4 - H2 gas mixture and (0001) c-plane monocrystalline aluminium nitride (AlN) films at high temperatures, in the 800°C-1200°C range. As a typical result, the growth of epitaxial 70 nm thick layers with (111)-fcc Ti1-xAlxN (0.05=x=0.65) has been processed. Multicomponent mass transport and diffusion modelling is proposed to assess the experimental results. A good agreement is found between the experimental thickness of the transformed zones and the calculated titanium diffusion length in AlN. Fcc-Ti1-xAlxN phase formation can be regarded as a diffusion-controlled mechanism. The novel experimental methodology developed in this work could help in understanding the complex formation and stability of this technological important material.

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Publication details

The article was received on 08 Dec 2017, accepted on 12 Feb 2018 and first published on 12 Feb 2018


Article type: Paper
DOI: 10.1039/C7CE02129A
Citation: CrystEngComm, 2018, Accepted Manuscript
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    Reactive chemical vapor deposition of heteroepitaxial Ti1-xAlxN films

    F. Mercier, H. Shimoda, S. lay, E. Blanquet and M. Pons, CrystEngComm, 2018, Accepted Manuscript , DOI: 10.1039/C7CE02129A

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