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Defect-related anisotropic surface micro-structures of nonpolar a-plane GaN epitaxial films

Abstract

The anisotropic surface etching behavior of nonpolar a-plane GaN (11-20) epitaxial films, grown by pulsed laser deposition, is investigated experimentally by wet chemical etching. Crystal-orientation dependent face state, induced by anisotropic growth kinetics, is the origination of the anisotropic properties of a-plane GaN epitaxial films. Defects which propagate into surface offer initial positions for etching process. Joint effect of the two factors determines the etching-exposed surface morphology, mainly including triangular prisms and pits, and makes wet chemical etching a promising way for the investigation of defect distribution. Type I1 basal stacking faults and partial dislocations are proved to have direct connection with etching-exposed triangular prisms and pits, respectively. This work does a mechanism research from the standpoint of the evolution process of surface morphology during etching process, and brings insight for further understanding of the anisotropic properties of nonpolar GaN epitaxial films for the realization of high polarization lighting emission device which has broad application for display and backlighting.

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Publication details

The article was accepted on 04 Jan 2018 and first published on 05 Jan 2018


Article type: Paper
DOI: 10.1039/C7CE02121F
Citation: CrystEngComm, 2018, Accepted Manuscript
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    Defect-related anisotropic surface micro-structures of nonpolar a-plane GaN epitaxial films

    X. Li, W. Wang, Y. Zheng, Y. Li, L. Huang, Z. Lin, Y. Yu and G. Li, CrystEngComm, 2018, Accepted Manuscript , DOI: 10.1039/C7CE02121F

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