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Issue 13, 2018
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Incorporation of indium into ε-gallium oxide epitaxial thin films grown via mist chemical vapour deposition for bandgap engineering

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Abstract

Epitaxial ε-gallium oxide (Ga2O3) thin films incorporated with In were successfully grown by mist chemical vapour deposition (CVD) on c-plane sapphire substrates for bandgap tuning. In was successfully incorporated into epitaxial ε-(InxGa1−x)2O3 films at an In composition of x = 0.2 without inducing phase separation. Phase separation originated from the (400) bixbyite structure of (InxGa1−x)2O3 when x > 0.2. The solubility limit of In incorporated into ε-Ga2O3 on sapphire substrates via mist CVD was therefore x = 0.2. Transmission electron microscopy measurements revealed that ε-(InxGa1−x)2O3 consisted of polycrystalline phases observed in the interface of the sapphire substrate and ε-phases located above the polycrystalline phase. The pole figure of ε-(InxGa1−x)2O3 thin films revealed that the epitaxial relationship between the ε-(InxGa1−x)2O3 thin film and the α-Al2O3 substrate is (001) ε-(InxGa1−x)2O3 [130]||(0001) α-Al2O3 [11−20]. The optical bandgap of the ε-(InxGa1−x)2O3 thin films was tuned from 4.5 to 5.0 eV without inducing phase separation.

Graphical abstract: Incorporation of indium into ε-gallium oxide epitaxial thin films grown via mist chemical vapour deposition for bandgap engineering

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Publication details

The article was received on 05 Dec 2017, accepted on 16 Feb 2018 and first published on 16 Feb 2018


Article type: Paper
DOI: 10.1039/C7CE02103H
Citation: CrystEngComm, 2018,20, 1882-1888
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    Incorporation of indium into ε-gallium oxide epitaxial thin films grown via mist chemical vapour deposition for bandgap engineering

    H. Nishinaka, N. Miyauchi, D. Tahara, S. Morimoto and M. Yoshimoto, CrystEngComm, 2018, 20, 1882
    DOI: 10.1039/C7CE02103H

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