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On the Growth Morphology and Crystallography of the Epitaxial Cu7Te4/CdTe Interface

Abstract

The controlling of the interface structures in epitaxial growth of thin films is quite essential as it is closely related to some special physical and chemical properties. Using the crystallographic calculation methods, the growth habit of the thin film as well as the interface geometry can be interpreted satisfactorily. In this work, the growth morphology and crystallography of epitaxial Cu7Te4/CdTe interface were investigated in detail through comprehensive TEM analysis and crystallographic calculations. The results indicated that the growth interface was not smooth under atomic level, which may be caused by the chemical etching of the CdTe surface. The crystallographic orientation relationship between CdTe and Cu7Te4 was confirmed to be [101]CdTe//[11-20]Cu7Te4, (1-1-1)CdTe//(0001)Cu7Te4 and (-1-21)CdTe//(-1100)Cu7Te4), which is a typical relationship in FCC/HCP system. Two variants of the Cu7Te4 phase were found distributed randomly across the interface region, indicating the equivalent crystallographic relations between the 2 variants. Both invariant line and near coincident site lattice calculations confirmed the observed orientation relationship between CdTe and Cu7Te4 had the lowest lattice mismatch and interface energy. The mutual rotation angles of ±54.74° and ±35.26° could be applied to obtain 2 types of coherent interfaces. Based on the TEM observation and crystallographic calculations, the possible growth process of Cu7Te4 thin film on CdTe substrate was discussed finally.

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Publication details

The article was accepted on 03 Jan 2018 and first published on 03 Jan 2018


Article type: Paper
DOI: 10.1039/C7CE02091K
Citation: CrystEngComm, 2018, Accepted Manuscript
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    On the Growth Morphology and Crystallography of the Epitaxial Cu7Te4/CdTe Interface

    F. Wang, Y. Lei, D. Wang, Z. Lei, J. Sun and Z. Liu, CrystEngComm, 2018, Accepted Manuscript , DOI: 10.1039/C7CE02091K

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