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Selective-area lateral overgrowth of SiC by supersaturation control in sublimation growth

Abstract

We realized the selective-area lateral overgrowth of SiC on a 6H-SiC (0001) seed crystal by supersaturation control in sublimation growth. For crystal growth from the vapor phase, the nucleation and growth rate of SiC crystal is critically dependent on supersaturation. Non-uniformity of the supersaturation over the 6H-SiC seed surface was effectively controlled by modulating a thermal profile through forming predefined pattern of different thermal conductivity distribution on the backside of seed. Localized nucleation and growth due to high supersaturation started at the lower temperature regions corresponding to the higher thermal conductivity on the backside of seed, subsequently followed by the lateral growth of 6H-SiC from the sidewalls of the preferential growth regions over the higher temperature regions corresponding to the lower thermal conductivity. It was found that the pileups of dislocation etch pits repeat the arrangement and boundaries of predefined pattern and free lateral growth was accompanied by a sharp decrease in the density of threading dislocation. It may be a promising technique of obtaining high-quality SiC crystals with low threading dislocation density.

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Publication details

The article was received on 25 Nov 2017, accepted on 07 Feb 2018 and first published on 07 Feb 2018


Article type: Paper
DOI: 10.1039/C7CE02036H
Citation: CrystEngComm, 2018, Accepted Manuscript
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    Selective-area lateral overgrowth of SiC by supersaturation control in sublimation growth

    X. Yang, X. Chen, Y. Peng, X. Hu and X. Xu, CrystEngComm, 2018, Accepted Manuscript , DOI: 10.1039/C7CE02036H

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